The production volume of Hall elements and Hall sensors in magnetic sensors is extremely large. It is mainly used in brushless DC motors (Hall motors), which are used in magnetic tape recorders, video recorders, XY recorders, printers, record players, and ventilation fans in instruments. In addition, Hall elements and Hall sensors are also used to measure speed, flow rate, flow rate, and use them to make instruments such as Gauss meters, ammeters, and power meters. Magnetic sensors are an important component of sensor products. With the development of magnetic sensor technology in China, the variety and quality of their products will be further developed and improved. Large and wide application areas such as automobiles and civil instruments are about to be domestically produced. Current sensors, Gauss meters, and other products have begun to enter the international market, and the gap with foreign products is rapidly narrowing.

Magnetic sensor
As the name suggests, it refers to the perception of the presence or magnetic strength of magnetic objects (within an effective range). These magnetic materials include not only permanent magnets, but also paramagnetic materials (such as iron, cobalt, nickel, and other alloys). Of course, they can also include the perception of the magnetic field around energized (DC, AC) wire packages or wires.
1、 The inductance coil is the first sensitive component used in traditional magnetic detection. The characteristic is that it does not need to be electrified in the coil, and generally only has a sensitive effect on the moving permanent magnet or current carrier. Later, it developed into using coils to form oscillation channels. Such as mine detectors, metal foreign object detectors, magnetic flux meters for measuring magnetic flux, etc. (magnetic flux gates, vibrating sample magnetometers).
2、 Hall sensor

hall sensor
Devices made based on the Hall effect.
Hall effect: When an electrically charged carrier is subjected to an external magnetic field perpendicular to the carrier plane, the carrier is subjected to the Lorentz force and tends to gather towards both sides. Due to the accumulation of free electrons (more on one side, less on the other), a potential difference is formed, which is more significant in semiconductor materials prepared by special processes. Thus, a Hall element was formed. The early Hall effect material InSb (indium antimonide). To enhance sensitivity to magnetic fields, the semiconductor IIIV element family has been applied in materials. In recent years, in addition to InSb, there have also been silicon substrates and gallium arsenide substrates. Hall devices are all made into full bridge devices due to their working mechanism, and their internal resistance is approximately between 150 Ω and 500 Ω. The working current of linear sensors is approximately 2-10mA, and the constant current power supply method is generally used.